How are the magnetic domains of bubble memory switched?

The switching of magnetic domains in bubble memory is achieved by passing a current through a control circuit that is imprinted on top of the crystal. This current generates magnetic fields that influence the orientation of the magnetic domains within the material, allowing for the formation, movement, and manipulation of the magnetic "bubbles" that store data.

Bubble memory operates on the principle that the magnetic domains can be individually controlled within a thin film of magnetic material. The application of electrical current allows for precise control of these domains, enabling data to be written and read. This method is essential as it aligns with the unique characteristics of bubble memory technology, which relies on the creation and manipulation of these bubbles for data storage.

Other methods, such as applying heat or using mechanical pressure, do not provide the same level of control or efficiency in switching the magnetic domains. Only the precise use of current through the control circuits facilitates the necessary magnetic interactions for effective data storage and retrieval in bubble memory systems.